PMST2222 datasheet(3/8 Pages) PHILIPS

Part #	PMST2222

Description	NPN switching transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Apr 22

3

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

PMST2222; PMST2222A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =50V

−

10

nA

PMST2222

IE = 0; VCB =50V; Tj = 125 °C

−

10

µA

collector cut-off current

IE = 0; VCB =60V

−

10

nA

PMST2222A

IE = 0; VCB =60V; Tj = 125 °C

−

10

µA

IEBO

collector cut-off current

IC = 0; VEB =3V

−

10

nA

hFE

DC current gain

IC = 0.1 mA; VCE =10V

35

−

IC = 1 mA; VCE =10V

50

−

IC = 10 mA; VCE =10V

75

−

IC = 10 mA; VCE =10V; Tamb = −55 °C35

−

IC = 150 mA; VCE = 1 V; note 1

50

−

IC = 150 mA; VCE = 10 V; note 1

100

300

DC current gain

IC = 500 mA; VCE = 10 V; note 1

PMST2222

30

−

PMST2222A

40

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

400

mV

PMST2222

IC = 500 mA; IB = 50 mA; note 1

−

1.6

V

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

300

mV

PMST2222A

IC = 500 mA; IB = 50 mA; note 1

−

1V

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

1.3

V

PMST2222

IC = 500 mA; IB = 50 mA; note 1

−

2.6

V

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

0.6

1.2

V

PMST2222A

IC = 500 mA; IB = 50 mA; note 1

−

2V

Cc

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

8pF

Ce

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

PMST2222

−

30

pF

PMST2222A

−

25

pF

fT

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

PMST2222

250

−

MHz

PMST2222A

300

−

MHz

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