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UPA811T Datasheet(PDF) 1 Page - California Eastern Labs |
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UPA811T Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 4 page UPA811T NPN SILICON HIGH FREQUENCY TRANSISTOR • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) DESCRIPTION NEC's UPA811T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications. ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 PT Total Power Dissipation 1 Die mW 110 2 Die mW 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. PART NUMBER UPA811T PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE1 Forward Current Gain at VCE = 3 V, IC = 5 mA 80 120 200 fT Gain Bandwidth at VCE = 3 V, IC = 5 mA GHz 5.5 8.0 Cre2 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.3 0.7 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 5.5 7.5 NF Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 1.9 3.2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA811T-T1, 3K per reel. Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 California Eastern Laboratories 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 1 2 3 4 5 6 0.2 (All Leads) +0.10 - 0.05 |
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