UPA811T

NPN SILICON HIGH

FREQUENCY TRANSISTOR

•

SMALL PACKAGE STYLE:

2 NE680 Die in a 2 mm x 1.25 mm package

•

LOW NOISE FIGURE:

NF = 1.9 dB TYP at 2 GHz

•

HIGH GAIN:

•

EXCELLENT LOW VOLTAGE, LOW CURRENT

PERFORMANCE

FEATURES

PACKAGE OUTLINE S06

(Top View)

DESCRIPTION

NEC's UPA811T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

suited for pager and other hand-held wireless applications.

SYMBOLS

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

V

20

Collector to Emitter Voltage

V

10

Emitter to Base Voltage

V

1.5

Collector Current

mA

35

Total Power Dissipation

1 Die

mW

110

2 Die

mW

200

Junction Temperature

°C

150

Storage Temperature

°C

-65 to +150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

PART NUMBER

UPA811T

PACKAGE OUTLINE

S06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

µA

1.0

µA

1.0

80

120

200

GHz

5.5

8.0

pF

0.3

0.7

dB

5.5

7.5

NF

dB

1.9

3.2

Notes:

1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA811T-T1, 3K per reel.

Note:

Pin 3 is identified with a circle on the bottom of the package.

PIN OUT

1. Collector Transistor 1

2. Base Transistor 2

3. Collector Transistor 2

4. Emitter Transistor 2

5. Emitter Transistor 1

6. Base Transistor 1

California Eastern Laboratories

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

0.15

0.9 ± 0.1

0.7

2.0 ± 0.2

0.65

1.3

1

2

3

4

5

6

0.2 (All Leads)

+0.10

- 0.05