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UPA834TF Datasheet(PDF) 1 Page - NEC |
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UPA834TF Datasheet(HTML) 1 Page - NEC |
1 / 10 page UPA834TF NPN SILICON EPITAXIAL TWIN TRANSISTOR • LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • HIGH GAIN: Q1: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE • 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE681, Q2: NE856) FEATURES DESCRIPTION The UPA834TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. PRELIMINARY DATA SHEET California Eastern Laboratories OUTLINE DIMENSIONS (Units in mm) PART NUMBER UPA834TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.8 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 150 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 Cre Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz pF 0.45 0.9 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 10 12 NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 100 145 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 3.0 4.5 Cre Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.7 1.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9 NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.13 ± 0.05 0.6 ± 0.1 2.0 ± 0.2 0.65 1.3 1 2 3 4 5 6 0.22 (All Leads) +0.10 - 0.05 0.45 Package Outline TS06 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. |
Similar Part No. - UPA834TF_99 |
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Similar Description - UPA834TF_99 |
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