PSMN015-100P datasheet(2/9 Pages) PHILIPS

Part #	PSMN015-100P

Description	N-channel TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PSMN015-100B, PSMN015-100P

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

AS = 74 A;

-

481

mJ

energy

t

p = 100 µs; Tj prior to avalanche = 25˚C;

V

DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:15

I

AS

Non-repetitive avalanche

-

75

A

current

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction

-

0.65

K/W

to mounting base

R

th j-a

Thermal resistance junction

SOT78 package, in free air

60

-

K/W

to ambient

SOT404 package, pcb mounted, minimum

50

-

K/W

footprint

ELECTRICAL CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

100

-

V

voltage

T

j = -55˚C

89

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

2.0

3.0

4.0

V

T

j = 175˚C

1.0

-

V

T

j = -55˚C

-

6

V

R

DS(ON)

Drain-source on-state

V

GS = 10 V; ID = 25 A

-

12

15

m

Ω

resistance

T

j = 175˚C

-

41

m

Ω

I

GSS

Gate source leakage current V

GS = ±10 V; VDS = 0 V

-

2

100

nA

I

DSS

Zero gate voltage drain

V

DS = 100 V; VGS = 0 V;

-

0.05

10

µA

current

T

j = 175˚C

-

500

µA

Q

g(tot)

Total gate charge

I

D = 75 A; VDD = 80 V; VGS = 10 V

-

109

-

nC

Q

gs

Gate-source charge

-

20

-

nC

Q

gd

Gate-drain (Miller) charge

-

50

-

nC

t

d on

Turn-on delay time

V

DD = 50 V; RD = 1.8 Ω;

-

30

-

ns

t

r

Turn-on rise time

V

GS = 10 V; RG = 5.6 Ω

-80

-

ns

t

d off

Turn-off delay time

Resistive load

-

150

-

ns

t

f

Turn-off fall time

-

95

-

ns

L

d

Internal drain inductance

Measured from tab to centre of die

-

3.5

-

nH

L

d

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

L

s

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

4720

-

pF

C

oss

Output capacitance

-

650

-

pF

C

rss

Feedback capacitance

-

380

-

pF

August 1999

2

Rev 1.100

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