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PSMN030-150B Datasheet(PDF) 3 Page - NXP Semiconductors |
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PSMN030-150B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN030-150B REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 55.5 A (body diode) I SM Pulsed source current (body - - 222 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 109 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 610 - nC December 2000 3 Rev 1.000 |
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