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MCZ33285EF Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MCZ33285EF Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 13 page Document Number: MC33285 Rev. 5.0, 2/2007 Freescale Semiconductor Advance Information * This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2007. All rights reserved. Dual High-Side TMOS Driver A single input controls the 33285 in driving two external high-side N- Channel TMOS power FETs controlling incandescent or inductive loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is possible. The 33285 contains a common internal charge pump used to enhance the Gate voltage of both FETs. An external charge capacitor provides access to the charge pump output. Both external FETs are protected against inductive load transients by separate internal source-to-gate dynamic clamps. The power FETs are protected by the 33285 with short-circuit delay time of 800 µs. The device is designed to withstand reverse polarity battery and load dump transients, encountered in automotive applications. Features • PWM Capability • Power TMOS Number One (OUT1) Short-Circuit Detection and Short-Circuit Protection • Voltage Range 7.0 V ≤ 40 V • Extended Temperature Range from -40 °C ≤ 125°C • Load Dump Protected • Overvoltage Detection and Activation of OUT2 During Overvoltage • Single Input Control for Both Output Stages • Capacitor Value of 100 nF Connected to Pin CP • Analog Input Control Measurement Detection • OUT1 LOAD Leakage Measurement Detection • Pb-Free Packaging Designated by Suffix Code EF Figure 1. 33285 Simplified Application Diagram HIGH-SIDE TMOS DRIVER D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN 33285 ORDERING INFORMATION Device Temperature Range (TA) Package MC33285D/R2 -40°C to 125°C 8 SOICN MCZ33285EF/R2 SRC OUT1 OUT2 DRN GND 33285 IN CP VCC VPWR Motor VCC Input Control |
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