Analog Integrated Circuit Device Data

Freescale Semiconductor

5

33390

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics

Characteristics noted under conditions of 7.0 V

≤ V

into the pin. All negative currents are out of the pin.

Characteristic

Symbol

Min

Typ

Max

Unit

POWER CONSUMPTION

Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)

BUS Load = 1380

Ω to GND, 3.6 nF to GND

BUS Load = 257

Ω to GND, 20.2 nF to GND

–

–

3.0

22.4

11.5

32

mA

Battery Bus Low Input Current

After SLEEP Toggle Low to High; Prior to Tx Toggling

After Tx Toggle High to Low

–

–

1.1

6.4

3.0

8.5

mA

Sleep State Battery Current

–

38.2

65

µA

BUS

BUS Input Receiver Threshold (6)

Threshold High (Bus Increasing until Rx

≥ 3.0 V)

Threshold Low (Bus Decreasing until Rx

≤ 3.0 V)

Threshold in Sleep State (SLEEP = 0 V)

4.25

–

2.4

0.1

3.9

3.7

3.0

0.2

–

3.5

3.4

0.6

V

BUS-Out Voltage (257

Ω ≤ R

8.2 V

≤ V

4.25 V

≤ V

Tx = 0 V

6.25

–

6.9

–

0.27

8.0

0.7

V

BUS Short Circuit Output Current

Tx = 5.0 V, -2.0 V

≤ V

60

129

170

mA

BUS Leakage Current

-2.0 V

≤ V

0 V

≤ V

-500

–

-55

189

–

500

µA

150

170

190

°C

BUS Thermal Shutdown Hysteresis (8)

10

12

15

°C

Figure 4)

-18 V

≤ V

-18 V

≤ V

–

–

0.00

0.00

0.1

0.1

mA

Notes

6.

7.

Device characterized but not production tested for thermal shutdown.

8.

Device characterized but not production tested for thermal shutdown hysteresis.