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PSMN130-200D Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN130-200D Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page August 1999 4 Rev 1.000 Philips Semiconductors Product specification PSMN130-200D N-channel TrenchMOS(TM) transistor REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 20 A (body diode) I SM Pulsed source current (body - - 80 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.95 1.2 V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 124 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 25 V - 0.74 - µC |
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