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MPC8247VRI Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc |
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MPC8247VRI Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 60 page MPC8272 PowerQUICC II™ Family Hardware Specifications, Rev. 1.5 8 Freescale Semiconductor DC Electrical Characteristics This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (either GND or VCC). Figure 2 shows the undershoot and overshoot voltage of the 60x bus memory interface of the MPC8272. Note that in PCI mode the I/O interface is different. Figure 2. Overshoot/Undershoot Voltage 3 DC Electrical Characteristics Table 5 shows DC electrical characteristics. Junction temperature (maximum) Tj 105 2 °C Ambient temperature TA 0–702 °C 1 Caution: These are the recommended and tested operating conditions. Proper operation outside of these conditions is not guaranteed. 2 Note that for extended temperature parts the range is (-40)T A – 105Tj. Table 5. DC Electrical Characteristics 1 Characteristic Symbol Min Max Unit Input high voltage— all inputs except TCK, TRST and PORESET 2 VIH 2.0 3.465 V Input low voltage 3 VIL GND 0.8 V CLKIN input high voltage VIHC 2.4 3.465 V CLKIN input low voltage VILC GND 0.4 V Input leakage current, VIN = VDDH 4 IIN —10 µA Hi-Z (off state) leakage current, VIN = VDDH 4 IOZ —10 µA Signal low input current, VIL = 0.8 V IL —1 µA Table 4. Recommended Operating Conditions 1 (continued) Rating Symbol Value Unit GND GND – 0.3 V GND – 1.0 V Not to exceed 10% GVDD of tSDRAM_CLK GVDD + 5% 4 V VIH VIL |
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