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MPC8541CVTAKE Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc |
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MPC8541CVTAKE Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc |
10 / 84 page MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specifications, Rev. 4 10 Freescale Semiconductor Electrical Characteristics Figure 2 shows the undershoot and overshoot voltages at the interfaces of the MPC8541E. Figure 2. Overshoot/Undershoot Voltage for GVDD/OVDD/LVDD The MPC8541E core voltage must always be provided at nominal 1.2 V (see Table 2 for actual recommended core voltage). Voltage to the processor interface I/Os are provided through separate sets of supply pins and must be provided at the voltages shown in Table 2. The input voltage threshold scales with respect to the associated I/O supply voltage. OVDD and LVDD based receivers are simple CMOS I/O circuits and satisfy appropriate LVCMOS type specifications. The DDR SDRAM interface uses a single-ended differential receiver referenced the externally supplied MVREF signal (nominally set to GVDD/2) as is appropriate for the SSTL2 electrical signaling standard. Input voltage DDR DRAM signals MVIN GND to GVDD V DDR DRAM reference MVREF GND to GVDD V Three-speed Ethernet signals LVIN GND to LVDD V PCI, local bus, DUART, SYSCLK, system control and power management, I2C, and JTAG signals OVIN GND to OVDD V Die-junction Temperature Tj 0 to 105 °C Table 2. Recommended Operating Conditions (continued) Characteristic Symbol Recommended Value Unit GND GND – 0.3 V GND – 0.7 V Not to Exceed 10% G/L/OVDD + 20% G/L/OVDD G/L/OVDD + 5% of tSYS 1 1. Note that tSYS refers to the clock period associated with the SYSCLK signal. VIH VIL Note: |
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Similar Description - MPC8541CVTAKE |
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