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BAP70AM Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAP70AM Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page BAP70AM_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 November 2006 3 of 7 NXP Semiconductors BAP70AM Silicon PIN diode array 7. Characteristics Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.9 1.1 V IR reverse current VR = 50 V - - <100 nA Cd diode capacitance see Figure 1; f = 1 MHz; - VR = 0 V - 570 - fF VR = 1 V - 400 - fF VR = 5 V - 270 - fF VR = 20 V - 200 250 fF rD diode forward resistance see Figure 2; f = 100 MHz; - IF = 0.5 mA - 77 100 Ω IF = 1 mA - 40 50 Ω IF = 10 mA - 5.4 7 Ω IF = 100 mA - 1.4 1.9 Ω τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA - 1.25 - µs LS series inductance IF = 100 mA; f = 100 MHz - 0.6 - nH f = 1 MHz; Tj =25 °C. f = 100 MHz; Tj =25 °C. Fig 1. Diode capacitance as a function of reverse voltage; typical values Fig 2. Diode forward resistance as a function of forward current; typical values VR (V) 020 15 510 001aaa461 400 300 500 600 Cd (fF) 200 103 102 10 1 mce007 10−1 110 rD ( Ω) IF (mA) 102 |
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