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FSQ321L Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSQ321L Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 24 page © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.4 5 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified. Notes: 6. Repetitive rating: Pulse width limited by maximum junction temperature. 7. L=51mH, starting TJ=25°C. 8. Meets JEDEC standards JESD22-A114 and JESD22-A115. Thermal Impedance(9) Notes: 9. All items are tested with the standards JESD 51-2 and 51-10 (DIP). 10. Free-standing, with no heat-sink, under natural convection. 11. Infinite cooling condition - refer to the SEMI G30-88. 12. Measured on the package top surface. Symbol Characteristic Min. Max. Unit VSTR Vstr Pin Voltage 500 V VDS Drain Pin Voltage 650 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 9.0 V VSync Sync Pin Voltage Range -0.3 9.0 V IDM Drain Current Pulsed(6) FSQ0365 12 A FSQ0265 8 FSQ0165 4 FSQ321/311 1.5 EAS Single Pulsed Avalanche Energy(7) FSQ0365 230 mJ FSQ0265 140 FSQ0165 50 FSQ321/311 10 PD Total Power Dissipation 1.5 W TJ Recommended Operating Junction Temperature -40 Internally limited °C TA Operating Ambient Temperature -40 85 °C TSTG Storage Temperature -55 150 °C ESD Human Body Model(8) CLASS1 C Machine Model(8) CLASS B Symbol Parameter Value Unit 8-DIP θ JA (10) Junction-to-Ambient Thermal Resistance 80 °C/W θ JC (11) Junction-to-Case Thermal Resistance 20 θ JT (12) Junction-to-Top Thermal Resistance 35 |
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