MML1225

MXL1225

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

VOLTAGE RANGE - 300 to 380 Volts

CURRENT - 0.8 Ampere

Description

These Silicon Controlled Rectifiers are high

performance planar diffused PNPN devices.

They are intended for low cost, high volume

applications.

Pinning

1 = Gate

2 = Anode

3 = Cathode

Characteristic

Symbol

Rating

Unit

Peak Repetitive Off-State

MML1225

300

V

Ω)

MXL1225

380

0.8

A

Peak Gate Current(10

µs Max)

1

A

Gate Power Dissipation(20ms Max)

0.1

W

Reverse Peak Gate Voltage

8

V

Operating Junction Temperature

-40 to +125

o

C

Storage Temperature

-40 to +125

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Peak Repetitive Forward

-

-

5

µA

Off-State Blocking Current

-

-

100

Ω

Peak Forward On-State Voltage

-

-

1.4

V

-

-

2.2

Continuous DC Gate Trigger Current

-

-

200

µA

Ω

Continuous DC Gate Trigger Voltage

-

-

0.8

V

Ω

DC Holding Current

-

-

5

mA

Ω, Gate Open

DC Latching Current

-

-

6

mA

Ω, Gate Open

Critical Rate-of-Rise of Off-State Voltage

dv/dt

25

-

-

V/

µS

Critical Rate-of-Rise of Off-State Current

di/dt

30

-

-

A/

µS

Gate Controlled Delay Time

-

-

0.5

µsec

µS

Thermal Resistance, Junction to Case

R

θJC

100

-

-

o

C/W

-

Electrical Characteristics

SOT-89

Dimensions in inches and (millimeters)

.063(1.60)

.055(1.40)

.066(1.70)

.059(1.50)

.167(4.25)

.159(4.05)

.016(0.41)

.014(0.35)

.120(3.04)

.117(2.96)

.181(4.60)

.173(4.40)

.060(1.52)

.058(1.48)

.020(0.51)

.014(0.36)

.102(2.60)

.095(2.40)

1

2

3