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BB179LX Datasheet(PDF) 3 Page - NXP Semiconductors |
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BB179LX Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page BB179LX_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Preliminary data sheet Rev. 01 — 13 April 2006 3 of 7 Philips Semiconductors BB179LX UHF variable capacitance diode f = 1 MHz; Tj =25 °C. f = 470 MHz; Tj =25 °C. Fig 1. Diode capacitance as a function of reverse voltage; typical values Fig 2. Diode serial resistance as a function of reverse voltage; typical values 001aae543 10 20 30 Cd (pF) 0 VR (V) 10−1 102 10 1 001aae544 0.4 0.2 0.6 0.8 rs ( Ω) 0 VR (V) 10−1 102 10 1 Tj =25 °C to 85 °C. Fig 3. Reverse current as function of junction temperature; maximum values Fig 4. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values 001aae541 102 10 103 IR (nA) 1 Tj (°C) 0 100 80 40 60 20 VR (V) 10−1 102 10 1 001aae542 10−3 10−4 10−2 TCCd (K−1) 10−5 |
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