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SA5222D Datasheet(PDF) 8 Page - NXP Semiconductors |
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SA5222D Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 8 page Philips Semiconductors Product specification SA5222 Low-power FDDI transimpedance amplifier 1995 Apr 26 8 1 2 3 4 8 7 6 5 VCC1 GND 1 GND 1 VCC2 GND 2 SD00505 IN OUT OUT Figure 25. SA5222 Bonding Diagram Die Sales Disclaimer Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25 °C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales. |
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