Philips Semiconductors

Product specification

SA5222

Low-power FDDI transimpedance amplifier

1995 Apr 26

8

1

2

3

4

8

7

6

5

VCC1

GND 1

GND 1

VCC2

GND 2

SD00505

IN

OUT

OUT

Figure 25. SA5222 Bonding Diagram

Die Sales Disclaimer

Due to the limitations in testing high frequency and other parameters

at the die level, and the fact that die electrical characteristics may

shift after packaging, die electrical parameters are not specified and

die are not guaranteed to meet electrical characteristics (including

temperature range) as noted in this data sheet which is intended

only to specify electrical characteristics for a packaged device.

All die are 100% functional with various parametrics tested at the

wafer level, at room temperature only (25

°C), and are guaranteed to

be 100% functional as a result of electrical testing to the point of

wafer sawing only. Although the most modern processes are

utilized for wafer sawing and die pick and place into waffle pack

carriers, it is impossible to guarantee 100% functionality through this

process. There is no post waffle pack testing performed on

individual die.

Since Philips Semiconductors has no control of third party

procedures in the handling or packaging of die, Philips

Semiconductors assumes no liability for device functionality or

performance of the die or systems on any die sales.

Although Philips Semiconductors typically realizes a yield of 85%

after assembling die into their respective packages, with care

customers should achieve a similar yield. However, for the reasons

stated above, Philips Semiconductors cannot guarantee this or any

other yield on any die sales.