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GMR40H100CTB3T Datasheet(PDF) 2 Page - Gamma Microelectronics Inc. |
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GMR40H100CTB3T Datasheet(HTML) 2 Page - Gamma Microelectronics Inc. |
2 / 7 page TO - 3P A : Assembly Location Y : Year WW : Weekly Ordering Number Package Shipping GMR40H100CTP3T GMR40H100CTB3T GMR40H100CTPF3T GMR40H100CTBF3T TO - 3P TO - 220AB TO - 3PF TO - 220FPAB 30 Unit/ Tube 50 Unit/ Tube 30 Unit/ Tube 50 Unit/ Tube 2 MARKING INFORMATION ORDERING INFORMATION 40H100C AYW W * For detail Ordering Number identification, please see last page. TO - 220AB 40H100C AYW W ABSOLUTE RATINGS (T = 25°C) C Symbol Parameter Value Unit VRRM IF(AV) IFSM Repetitive peak reverse voltage per diode per device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per leg. (Non-Repetitive) Operating junction temperature and storage temperature 100 20 40 -45 to + 150 V A A °C T,j Tstg Maximum average forward rectified current 350 A A MICROELECTRONICS GMR40H100C Power Discrete HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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