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SP800LEN Datasheet(PDF) 2 Page - Sipex Corporation |
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SP800LEN Datasheet(HTML) 2 Page - Sipex Corporation |
2 / 24 page Date: 4/18/05 SP691A/693A/800L/800M Low Power Microprocessor Supervisor with Battery Switch-Over © Copyright 2005 Sipex Corporation 2 These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. Terminal Voltages (with respect to GND) V CC.......................................................................................-0.3V to +6V V BATT.....................................................................................-0.3V to +6V All Other Inputs........................................................-0.3V to (V CC +0.3V) Input Currents V CC Peak...........................................................................................1.0A V CC Continuous.............................................................................250mA V BATT Peak....................................................................................250mA V BATT Continuous............................................................................25mA GND, BATT ON............................................................................100mA All Other Inputs..............................................................................25mA V CC = +4.75V to +5.5V for the SP691A/800L, VCC = +4.5V to +5.5V for the SP693A/800M, VBATT = +2.8V, and TAMB = TMIN to TMAX unless otherwise noted. Typical values apply at T AMB=+25 OC. S R E T E M A R A P . N I M . P Y T . X A M S T I N U S N O I T I D N O C , e g n a R e g a t l o V g n i t a r e p O V C C V r o T T A B 1 E T O N , 0 5 . 5 V V , e g a t l o V t u p t u O T U O e d o M g n i t a r e p O l a m r o N n i V C C 5 0 . 0 - V C C 3 . 0 - V C C 2 . 0 - V C C 5 1 0 . 0 - V C C 5 1 . 0 - V C C 9 0 . 0 - V V C C I , V 5 . 4 = T U O A m 5 2 = V C C I , V 5 . 4 = T U O A m 0 5 2 = V C C V , V 0 . 3 = T T A B I , V 8 . 2 = T U O A m 0 0 1 = V C C V - o t - T U O e c n a t s i s e R - n O 6 . 0 9 . 0 2 . 1 0 . 2 Ω V C C V 5 . 4 = V C C V 0 . 3 = V T U O e d o M p u k c a B - y r e t t a B n i V T T A B 3 . 0 - V T T A B 5 2 . 0 - V T T A B 5 1 . 0 - V T T A B 1 . 0 - V T T A B 7 0 . 0 - V T T A B 5 0 . 0 - V V T T A B I , V 5 . 4 = T U O A m 0 2 = V T T A B I , V 8 . 2 = T U O A m 0 1 = V T T A B I , V 0 . 2 = T U O A m 5 = V T T A B V - o t - T U O e c n a t s i s e R - n O 5 7 0 1 5 1 5 2 0 3 Ω V T T A B V 5 . 4 = V T T A B V 8 . 2 = V T T A B V 0 . 2 = l a m r o N n i t n e r r u C y l p p u S I , e d o M g n i t a r e p O c c V 5 3 0 6 µA V C C V ( > T T A B I g n i d u l c x e , ) V 1 - T U O - y r e t t a B n i t n e r r u C y l p p u S I , e d o M p u k c a B T T A B 2 E T O N , 1 0 0 . 0 0 . 2 µA V C C V ( < T T A B V , ) V 2 . 1 - T T A B I g n i d u l c x e , V 8 . 2 = T U O V T T A B I , t n e r r u C y b d n a t S T T A B , 3 E T O N 1 . 0 - 2 0 . 0 µA V C C > V ( T T A B I g n i d u l c x e , ) V 2 . 0 + T U O d l o h s e r h T r e v o h c t i w S y r e t t a B V T T A B 3 0 . 0 + V T T A B 3 0 . 0 - V p u - r e w o p n w o d - r e w o p s i s e r e t s y H r e v o h c t i w S y r e t t a B 0 6 V m k a e P o t k a e P ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Enhanced ESD Specifications........................+4kV Human Body Model Power Dissipation Per Package 16-pin PDIP (derate 14.3mW/OC above +70OC).......................1150mW 16-pin Narrow SOIC (derate 13.6mW/OC above 70OC)............1090mW 16-pin Wide SOIC (derate 11.2mW/OC above 70OC).................900mW Storage Temperature....................................................-65OC to +150OC Lead Temperature (soldering,10 sec).........................................+300OC |
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