2 of 12
NBB-310
Rev A11 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
350
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
VD=+5V, ICC=50mA, Z0=50Ω, TA=+25°C
Small Signal Power Gain, S21
12.5
13.0
dB
f=0.1GHz to 1.0GHz
12.0
12.5
dB
f=1.0GHz to 4.0GHz
11.0
11.5
dB
f=4.0GHz to 8.0GHz
9.0
10.0
dB
f=8.0GHz to 12.0GHz
Gain Flatness, GF
±0.6
dB
f=0.1GHz to 8.0GHz
Input and Output VSWR
1.4:1
f=0.1GHz to 7.0GHz
1.75:1
f=7.0GHz to 10.0GHz
2.0:1
f=10.0GHz to 12.0GHz
Bandwidth, BW
12.0
GHz
BW3 (3dB)
Output Power @
-1dB Compression, P1dB
13.8
dBm
f=2.0GHz
15.2
dBm
f=6.0GHz
14.5
dBm
f=8.0GHz
12.0
dBm
f=12.0GHz
Noise Figure, NF
4.9
dB
f=3.0GHz
Third Order Intercept, IP3
+24.0
dBm
f=2.0GHz
Reverse Isolation, S12
-17
dB
f=0.1GHz to 12.0GHz
Device Voltage, VD
4.4
4.65
4.9
V
Gain Temperature Coefficient,
δGT/δT
-0.0015
dB/°C
MTTF versus Temperature
@ ICC=50mA
Case Temperature
85
°C
Junction Temperature
139
°C
MTTF
>1,000,000
hours
Thermal Resistance
θJC
216
°C/W
J
T
T
CASE
–
V
D
I
CC
⋅
---------------------------
θ
JC °CWatt
⁄
()
=
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
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