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SSR1008G Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SSR1008G Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page ELECTRICAL CHARACTERISTICS Symbol Min Typ Max Units Instantaneous Forward Voltage Drop (TA = 25°C, 300 µsec pulse) IF = 1 A IF = 5 A IF = 10 A VF1 –– –– –– –– –– –– 0.56 0.72 0.82 VDC Instantaneous Forward Voltage Drop (IF = 5 A, 300 µsec pulse) TA = -55°C VF2 –– –– 0.79 VDC Reverse Leakage Current (Rated VR, TA = 25°C, 300 µsec pulse minimum) IR1 –– –– 100 µA Reverse Leakage Current (Rated VR, TA = 100°C, 300 µsec pulse minimum) IR2 –– –– 5 mA Junction Capacitance (VR = 10V, f = 1MHz, TA = 25 °C) CJ –– –– 400 pF Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR1008G SSR1009G SSR1010G CASE OUTLINE: CERPACK (Suffix G) PIN OUT: PIN 1: ANODE PIN 2: ANODE TAB: CATHODE Note: For optimal performance, connect Anode terminals together. 12 2x .100 .210 (.040) .140 .010±.002 (.050) 2x .060 .370 .020 .315 .300 .105±.010 .340 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0203E DOC |
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