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VSMF3710 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # VSMF3710
Description  High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSMF3710 Datasheet(HTML) 1 Page - Vishay Siliconix

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VSMF3710
Document Number 81241
Rev. 1.5, 25-Jan-07
Vishay Semiconductors
www.vishay.com
1
94 8553
High Speed Infrared Emitting Diode, 890 nm
RoHS Compliant, Released for Lead (Pb)-free Solder Process
Description
VSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 890 nm.
Features
• High radiant power
• High speed: tr = 30 ns
• High modulation band width: fc = 12 MHz
• Peak wavelength:
λ
p = 890 nm
• High reliability
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• High speed IR data transmission
• High power emitter for low space applications
• High
performance
transmissive
or
reflective
sensors
Order Instructions
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part
Ordering code
Remarks
VSMF3710
VSMF3710-GS08
MOQ: 7500 pcs, 1500 pcs per reel
VSMF3710
VSMF3710-GS18
MOQ: 8000 pcs, 8000 pcs per reel
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
acc. figure 8, J-STD-020B
Tsd
260
°C
Thermal resistance
junction / ambient
RthJA
400
K/W
e3


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