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VSMF3710 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VSMF3710 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page VSMF3710 Document Number 81241 Rev. 1.5, 25-Jan-07 Vishay Semiconductors www.vishay.com 1 94 8553 High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process Description VSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 890 nm. Features • High radiant power • High speed: tr = 30 ns • High modulation band width: fc = 12 MHz • Peak wavelength: λ p = 890 nm • High reliability • Low forward voltage • Suitable for high pulse current application • Wide angle of half intensity • Compatible with automatic placement equipment • EIA and ICE standard package • 8 mm tape and reel standard: GS08 or GS18 • Lead (Pb)-free reflow soldering • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • High speed IR data transmission • High power emitter for low space applications • High performance transmissive or reflective sensors Order Instructions Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Ordering code Remarks VSMF3710 VSMF3710-GS08 MOQ: 7500 pcs, 1500 pcs per reel VSMF3710 VSMF3710-GS18 MOQ: 8000 pcs, 8000 pcs per reel Parameter Test condition Symbol Value Unit Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1A Power dissipation PV 170 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature acc. figure 8, J-STD-020B Tsd 260 °C Thermal resistance junction / ambient RthJA 400 K/W e3 |
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