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SFS2327 Datasheet(PDF) 1 Page - Solid States Devices, Inc

Part # SFS2327
Description  1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER
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Manufacturer  SSDI [Solid States Devices, Inc]
Direct Link  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SFS2327 Datasheet(HTML) 1 Page - Solid States Devices, Inc

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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Low-Level Gate Characteristics
• IGT = 200 µA (Max) @ 25oC
• Low Holding Current IH = 1 mA (Max) @ 25oC
• Anode Common to Case
• Hermetically Sealed
SFS2326 thru SFS2329
1.6 AMPS
200 ─ 400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS2326
SFS2327
SFS2328
SFS2329
VDRM
VRRM
200
250
300
400
Volts
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
SFS2326
SFS2327
SFS2328
SFS2329
VRSM
300
350
400
500
Volts
RMS On-State Current
(All Conduction Angles)
IT (RMS)
1.6
Amps
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TC = 80
oC )
ITSM
15
Amps
Peak Gate Power
PGM
0.1
Watts
Average Gate Power
PG (AV)
0.01
Watts
Peak Gate Current
IGM
0.1
Amps
Peak Gate Voltage
VGM
6.0
Volts
Operating Junction Temperature Range
TJ
-65 to +125
oC
Storage Temperature Range
Tstg
-65 to +150
oC
Thermal Resistance, Junction to Case
RθJC
30
oC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR004A
DOC


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