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SFT3439S.22 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFT3439S.22 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT3439S.22 Electrical Characteristics 4/ Symbol Min Typ Max Units Collector Cutoff Current VCB = 360 V VCB = 450 V VCB = 360 V, TA= 150ºC ICBO1 ICBO2 ICBO3 –– –– –– 0.05 0.1 –– 2 5 100 µA Collector Cutoff Current VCE = 300 V ICEO –– 0.02 2 µA Collector Cutoff Current VCE = 450 V, VBE= 1.5 V ICEX1 –– –– 5 µA Emitter Cutoff Current VEB = 7.0 V IEBO –– 0.01 10 µA VCE = 10V, IC = 0.2 mA VCE = 10V, IC = 2 mA VCE = 10V, IC = 20 mA HFE1 HFE2 HFE4 10 30 40 65 90 115 –– –– 160 DC Forward Current Transfer Ratio * VCE = 10V, IC = 20mA, Ta= -55ºC HFE4 15 30 –– Collector to Emitter Saturation Voltage IC = 50 mA, I = 4 mA VCE(sat)1 –– 0.23 0.5 V Base to Emitter Saturation Voltage IC = 50 mA, IB= 4 mA VBE(sat)1 –– 0.75 1.3 V Frequency Transition (Small Signal Current Gain) @ f= 5 MHz VCE = 10V, IC = 10mA, f = 5 MHz hfe 3 5.5 15 Small Signal Current Gain @ f= 1 kHz VCE = 10V, IC = 5mA, f = 1 kHz hfe 25 110 –– Output Capacitance VCB = 10V, f = 1MHz Cobo –– 8 10 pF Input Capacitance VBE = 5V, f = 1MHz Cibo –– 35 75 pF Pulse Response VCC = 200V, IC = 20mA, IB = 2mA ton toff –– –– –– –– 1 10 µs Safe Operating Area VCE = 5V, IC = 1A, t = 1 s VCE = 350V, IC = 14 mA, t = 1 s SOA1 SOA2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0086A DOC NOTES: * Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. |
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