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IRHE57Z30 Datasheet(PDF) 1 Page - International Rectifier |
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IRHE57Z30 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 12* ID @ VGS = 12V, TC = 100°C Continuous Drain Current 8.0 IDM Pulsed Drain Current À 48 PD @ TC = 25°C Max. Power Dissipation 25 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 156 mJ IAR Avalanche Current À 12 A EAR Repetitive Avalanche Energy À 2.5 mJ dv/dt Peak Diode Recovery dv/dt  2.3 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.42 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A 04/26/06 www.irf.com 1 For footnotes refer to the last page LCC-18 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight RADIATION HARDENED JANSR2N7494U5 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT (LCC-18) REF: MIL-PRF-19500/700 TECHNOLOGY IRHE57Z30 55 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHE57Z30 100K Rads (Si) 0.07 Ω 12A* JANSR2N7494U5 IRHE53Z30 300K Rads (Si) 0.07 Ω 12A* JANSF2N7494U5 IRHE54Z30 500K Rads (Si) 0.07 Ω 12A* JANSG2N7494U5 IRHE58Z30 1000K Rads (Si) 0.07 Ω 12A* JANSH2N7494U5 * Current is limited by package PD - 93863E |
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