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IRHE57034 Datasheet(PDF) 1 Page - International Rectifier |
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IRHE57034 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 11.7 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.4 IDM Pulsed Drain Current À 46.8 PD @ TC = 25°C Max. Power Dissipation 25 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 87 mJ IAR Avalanche Current À 11.7 A EAR Repetitive Avalanche Energy À 2.5 mJ dv/dt Peak Diode Recovery dv/dt  3.4 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.42 (Typical) g International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A 04/27/06 www.irf.com 1 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHE57034 100K Rads (Si) 0.08 Ω 11.7A JANSR2N7495U5 IRHE53034 300K Rads (Si) 0.08 Ω 11.7A JANSF2N7495U5 IRHE54034 500K Rads (Si) 0.08 Ω 11.7A JANSG2N7495U5 IRHE58034 1000K Rads (Si) 0.1 Ω 11.7A JANSH2N7495U5 For footnotes refer to the last page Pre-Irradiation LCC-18 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight RADIATION HARDENED JANSR2N7495U5 POWER MOSFET 60V, N-CHANNEL SURFACE MOUNT (LCC-18) REF: MIL-PRF-19500/700 55 IRHE57034 TECHNOLOGY PD - 94239E |
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