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IRHF57Z30 Datasheet(PDF) 1 Page - International Rectifier |
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IRHF57Z30 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 12 * ID @ VGS = 12V, TC = 100°C Continuous Drain Current 10 IDM Pulsed Drain Current À 48 PD @ TC = 25°C Max. Power Dissipation 25 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 520 mJ IAR Avalanche Current À 12 A EAR Repetitive Avalanche Energy À 2.5 mJ dv/dt Peak Diode Recovery dv/dt  3.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in./1.6mm from case for 10s) Weight 0.98 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A 04/25/06 www.irf.com 1 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Identical Pre and Post Electrical Test Conditions n Repetitive Avalanche Ratings n Dynamic dv/dt Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated For footnotes refer to the last page TO-39 * Current is limited by package RADIATION HARDENED JANSR2N7491T2 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-39) REF: MIL-PRF-19500/701 5 5 TECHNOLOGY IRHF57Z30 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF57Z30 100K Rads (Si) 0.045 Ω 12A* JANSR2N7491T2 IRHF53Z30 300K Rads (Si) 0.045 Ω 12A* JANSF2N7491T2 IRHF54Z30 500K Rads (Si) 0.045 Ω 12A* JANSG2N7491T2 IRHF58Z30 1000K Rads (Si) 0.056 Ω 12A* JANSH2N7491T2 PD - 93793E |
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Similar Description - IRHF57Z30 |
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