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IRHF597130 Datasheet(PDF) 1 Page - International Rectifier |
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IRHF597130 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC=25°C Continuous Drain Current -6.7 ID @ VGS = -12V, TC=100°C Continuous Drain Current -4.3 IDM Pulsed Drain Current À -26.8 PD @ TC = 25°C Max. Power Dissipation 25 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 240 mJ IAR Avalanche Current À -6.7 A EAR Repetitive Avalanche Energy À 2.5 mJ dv/dt Peak Diode Recovery dv/dt  -17 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in./1.6 mm from case for 10s) Weight 0.98 (Typical ) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space appli- cations. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. oC A RADIATION HARDENED IRHF597130 POWER MOSFET THRU-HOLE (TO-39) 09/26/05 www.irf.com 1 100V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF597130 100K Rads (Si) 0.24 Ω -6.7A IRHF593130 300K Rads (Si) 0.24 Ω -6.7A For footnotes refer to the last page 5 5 TO-39 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight PD-96963 |
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