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IRHMS63264 Datasheet(PDF) 3 Page - International Rectifier |
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IRHMS63264 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHMS67264 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page Part numbers IRHMS67264 and IRHMS63264 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter Up to 300K Rads (Si) Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 250 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 10 µA VDS= 200V, VGS= 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 0.041 Ω VGS = 12V, ID = 28.5A RDS(on) Static Drain-to-Sourcee On-State VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 45A Resistance (Low Ohmic TO-254AA) — 0.041 Ω VGS = 12V, ID = 28.5A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables. 0 50 100 150 200 250 300 -20 -15 -10 -5 0 VGS Ag Xe Au Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range (MeV/(mg/cm2)) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -17V -20V Ag 43 1217 112 250 250 250 250 100 50 Xe 59 823 66 250 250 250 50 - - Au 90 1480 80 75 75 - - - - VDS (V) |
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