Philips Semiconductors

Product specification

SCC2691

Universal asynchronous receiver/transmitter (UART)

1998 Sep 04

5

SYMBOL

PARAMETER

RATING

UNIT

Note 4

°C

Storage temperature range

–65 to +150

°C

–0.5 to + 7.0

V

V

Power Dissipation

300

mW

NOTES:

1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other condition above those indicated in the operation section of this specification is not

implied.

2. For operating at elevated temperature, the device must be derated based on +150

°C maximum junction temperature.

3. This product includes circuitry specifically designed for the protection of its internal devices from damaging effects of excessive static

charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying any voltages larger than the rated maxima.

range.

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

Min

Typ

Max

UNIT

Input low voltage

Input high voltage

0.8

V

All except X1/CLK

X1/CLK

2

V

V

Output low voltage

Output high voltage

(except open drain outputs)

2.4

0.4

V

V

Input leakage current

–10

10

µA

Data bus 3-State leakage current

–10

10

µA

Open-drain output leakage current

–10

10

X1/CLK low input current

–100

–30

0

µA

X1/CLK high input current

0

30

100

µA

X2 low output current

–100

µA

X2 high output current

100

µA

Power supply current, active

0

°C to +70°C

–40

°C to +85°C

0.8

1.0

2.0

2.5

500

mA

mA

µA

NOTES:

range.

2. All voltage measurements are referenced to ground (GND). For testing, all input signals swing between 0V and 3.0V with a transition time of

20ns max. For X1/CLK, this swing is between 0.4V and 4.0V. All time measurements are referenced at input voltages of 0.8V and 2V and

output voltages of 0.8V and 2V as appropriate.

3. Typical values are at +25

°C, typical supply voltages, and typical processing parameters.

5. For power down current levels in the 1

µA region see the UART application note.