IRHY67C30CM

Pre-Irradiation

2

www.irf.com

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

3.4

ISM

Pulse Source Current (Body Diode)

À

—

—

13.6

VSD Diode Forward Voltage

—

—

1.0

V

trr

Reverse Recovery Time

—

— 741

ns

Tj = 25°C, IF = 3.4A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

2.1

nC

VDD ≤ 50V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

600

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

0.51

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

3.0

Ω

VGS = 12V, ID = 2.1A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

3.7

—

—

S ( )

VDS = 15V, IDS = 2.1A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS= 480V ,VGS=0V

——

25

VDS = 480V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

44

VGS =12V, ID = 3.4A

Qgs

Gate-to-Source Charge

—

—

14

nC

VDS = 300V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

9.0

Turn-On Delay Time

—

—

18

VDD = 300V, ID = 3.4A

tr

Rise Time

—

—

7.5

VGS =12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

31

tf

Fall Time

—

—

14

LS + LD

Total Inductance

—

6.8

—

Measured from Drain lead (6mm /

(

6mm /0.25in. from package)

Ciss

Input Capacitance

—

1267

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

79

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

1.1

—

Rg

Internal Gate Resistance

—

1.1

—

Ω

f = 1.0MHz, open drain

nA

Ã

nH

ns

µA

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

1.67

RthJA

Junction-to-Ambient

—

—

80

Typical Socket Mount

°C/W