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S1G Datasheet(PDF) 1 Page - Won-Top Electronics |
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S1G Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page S1A – S1M 1 of 4 © 2006 Won-Top Electronics Pb S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! Ideally Suited for Automatic Assembly B ! Low Forward Voltage Drop ! Surge Overload Rating to 30A Peak D ! Low Power Loss A ! Built-in Strain Relief F ! Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E Mechanical Data ! Case: SMB/DO-214AA, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.093 grams (approx.) ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Characteristic Symbol S1A S1B S1D S1G S1J S1K S1M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TL = 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.10 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 5.0 200 µA Reverse Recovery Time (Note 1) trr 2.5 µS Typical Junction Capacitance (Note 2) Cj 15 pF Typical Thermal Resistance (Note 3) RJL 30 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +175 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. WTE POWER SEMICONDUCTORS SMB/DO-214AA Dim Min Max A 3.30 3.94 B 4.06 4.70 C 1.91 2.11 D 0.152 0.305 E 5.08 5.59 F 2.13 2.44 G 0.051 0.203 H 0.76 1.27 All Dimensions in mm |
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