Philips Semiconductors

SI2304DS

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 17 August 2001

6 of 12

9397 750 08526

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain source on-state resistance

factor as a function of junction temperature.

2.5

VGS (V) =

3.0

4.0

5.0

8.0

3.5

10.0

ID

(A)

4

3

2

1

0

VDS (V)

0

0.5

1.0

1.5

003aaa122

VDS > ID x RDSon

Tj = 25

oC

= 150 oC

5

4

3

2

1

0

ID

(A)

01

2

3

4

5

VGS (V)

003aaa123

3.5

5.0

8.0

10.0

RDSon

(

Ω)

0.5

0.4

0.3

0.2

0.1

0

ID (A)

1

2

3

003aaa124

VGS (V) =

0

003aaa125

0

0.4

0.8

1.2

1.6

2.0

-60

-20

20

60

100

140

180

a

Tj (

oC)

a

R

DSon

R

DSon 25

°C

()

------------------------------

=