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SST39VF320-90-4I-B3KE Datasheet(PDF) 7 Page - Silicon Storage Technology, Inc |
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SST39VF320-90-4I-B3KE Datasheet(HTML) 7 Page - Silicon Storage Technology, Inc |
7 / 24 page Preliminary Specifications 32 Mbit Multi-Purpose Flash SST39VF320 7 ©2003 Silicon Storage Technology, Inc. S71143-02-000 11/03 TABLE 6: SYSTEM INTERFACE INFORMATION FOR SST39VF320 Address Data Data 1BH 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP Min (00H = no VPP pin) 1EH 0000H VPP max (00H = no VPP pin) 1FH 0003H Typical time out for Word-Program 2N µs (23 = 8 µs) 20H 0000H Typical time out for min size buffer program 2N µs (00H = not supported) 21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 0005H Typical time out for Chip-Erase 2N ms (25 = 32 ms) 23H 0001H Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs) 24H 0000H Maximum time out for buffer program 2N times typical 25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms) T6.3 1143 TABLE 7: DEVICE GEOMETRY INFORMATION FOR SST39VF320 Address Data Data 27H 0016H Device size = 2N Bytes (16H = 22; 222 = 4MByte) 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported) 2BH 0000H 2CH 0002H Number of Erase Sector/Block sizes supported by device 2DH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size) 2EH 0003H y = 1023 + 1 = 1024 sectors (03FFH = 1023) 2FH 0010H 30H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) 31H 003FH Block Information (y + 1 = Number of blocks; z x 256B = block size) 32H 0000H y = 63 + 1 = 64 blocks (0007H = 7) 33H 0000H 34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T7.2 1143 |
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