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SST37VF020-70-3C-WH Datasheet(PDF) 6 Page - Silicon Storage Technology, Inc |
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SST37VF020-70-3C-WH Datasheet(HTML) 6 Page - Silicon Storage Technology, Inc |
6 / 18 page 6 Data Sheet 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040 ©2006 Silicon Storage Technology, Inc. S71151-07-000 8/06 TABLE 5: Program/Erase DC Operating Characteristics VDD=2.7-3.6V (TA = 25°C±5°C) Symbol Parameter Limits Test Conditions Min Max Units IDD VDD Erase or Program Current 20 mA CE#=VIL, OE#=VH, VDD=VDD Max, WE#=VIL ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VH Supervoltage for A9 and OE# 11.4 12 V IHA9 Supervoltage Current for A9 200 µA OE#=VH Max, A9=VH Max, VDD=VDD Max, CE# = VIL IHOE# Supervoltage Current for OE# 3 mA CE#=VIL, OE#=11.4-12V, VDD=VDD Max, WE#=VIL T5.2 1151 TABLE 6: Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T6.1 1151 TABLE 7: Capacitance (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T7.0 1151 TABLE 8: Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T8.3 1151 |
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