Preliminary Specifications

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP14C

©2007 Silicon Storage Technology, Inc.

S71353-00-000

02/07

4

ELECTRICAL SPECIFICATIONS

The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-

ifications. Refer to Figures 3 through Figure 12 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating

of average output power could cause permanent damage to the device.

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Operating Range

Range

Ambient Temp

Industrial

-40°C to +85°C

3.3V

TABLE

2: DC Electrical Characteristics

Symbol

Parameter

Min.

Typ

Max.

Unit

Test Conditions

Supply Voltage at pins 5, 12, 16

3.0

3.3

3.6

V

Supply Current

for 802.11g, 23 dBm

205

mA

for 802.11b, 22.5 dBm

195

mA

Idle current for 802.11g to meet EVM<4% @ 20 dBm

100

mA

Shut down current

0.1

µA

Reference Voltage for, with 30

Ω resistor

2.85

2.95

V

T2.2 1353