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MAX9986AETP+ Datasheet(PDF) 10 Page - Maxim Integrated Products

Part # MAX9986AETP+
Description  SiGe High-Linearity, 815MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch
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Manufacturer  MAXIM [Maxim Integrated Products]
Direct Link  https://www.maximintegrated.com/en.html
Logo MAXIM - Maxim Integrated Products

MAX9986AETP+ Datasheet(HTML) 10 Page - Maxim Integrated Products

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SiGe High-Linearity, 815MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
10
______________________________________________________________________________________
reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high-
frequency circuit stability. Bypass each VCC pin and
TAP with the capacitors shown in the Typical Application
Circuit; see Table 1. Place the TAP bypass capacitor to
ground within 100 mils of the TAP pin.
Exposed Pad RF/Thermal Considerations
The exposed paddle (EP) of the MAX9986A’s 20-pin
thin QFN-EP package provides a low thermal-resis-
tance path to the die. It is important that the PC board
on which the MAX9986A is mounted be designed to
conduct heat from the EP. In addition, provide the EP
with a low-inductance path to electrical ground. The EP
MUST be soldered to a ground plane on the PC board,
either directly or through an array of plated via holes.
COMPONENT
VALUE
DESCRIPTION
L1, L2
330nH
Wire-wound high-Q inductors (0805)
L3*
30nH
Wire-wound high-Q inductor (0603)
C1
10pF
Microwave capacitor (0603)
C2, C4, C7, C8, C10, C11, C12
82pF
Microwave capacitors (0603)
C3, C5, C6, C9, C13, C14
0.01µF
Microwave capacitors (0603)
C15
220pF
Microwave capacitor (0402)
R1
953
Ω±1% resistor (0603)
R2
619
Ω±1% resistor (0603)
R3
0
Ω±1% resistor (1206)
T1
4:1 balun
IF balun TC4-1W-7A
U1
MAX9986A
Maxim IC
Table 1. Component List Referring to the Typical Application Circuit
Pin Configuration/Functional Diagram
MAX9986A
1
2
3
4
5
15
14
13
12
11
6
7
89
10
20
19
18
17
16
GND
TAP
RF
VCC
THIN QFN
VCC
GND
GND
LO2
GND
LO1
*Use L3 for improved RF-to-IF and LO-to-IF isolation. See the Applications Information section regarding stability issues when using
L3 inductor.


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