APT8056BVFR_04 datasheet(2/4 Pages) ADPOW

Part #	APT8056BVFR

Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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10-5

10-4

10-3

10-2

10-1

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.4

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

DYNAMIC CHARACTERISTICS

APT8056BVFR

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

IS

ISM

VSD

dv/

dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

t r

td(off)

t f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 1.6Ω

MIN

TYP

MAX

3700

4440

370

515

180

270

185

275

16

24

90

135

12

24

10

20

50

75

10

20

UNIT

pF

nC

ns

MIN

TYP

MAX

16

64

1.3

18

Tj = 25°C

250

Tj = 125°C

400

Tj = 25°C

0.8

Tj = 125°C

2.9

Tj = 25°C

10

Tj = 125°C

18

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 10.16mH, RG = 25Ω, Peak IL = 16A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

5 IS - -ID [Cont.], di/dt = 100A/µs, VDD - VDSS, Tj - 150°C, RG = 2.0Ω,

VR = 200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

RθJC

RθJA

MIN

TYP

MAX

0.34

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

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APT8056BVFR Datasheet(PDF) 2 Page - Advanced Power Technology

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