Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

(V

GS

= 10V, 14A)

Zero Gate Voltage Drain Current (V

DS

= 1000V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 800V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

MAXIMUM RATINGS

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

1000

28

0.350

100

500

±100

35

APT10035

1000

28

112

±30

±40

690

5.52

-55 to 150

300

28

50

3000

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

T-MAX™

G

D

S

TO-264

B2LL

LLL

APT10035B2LL

APT10035LLL

1000V

28A 0.350

Ω

Ω

Ω

Ω

Ω

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

DS(ON)

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

POWER MOS 7

R

MOSFET