APT10050JVFR_04 datasheet(2/4 Pages) ADPOW

Part #	APT10050JVFR

Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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APT10050JVFR

10-5

10-4

10-3

10-2

10-1

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

DYNAMIC CHARACTERISTICS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 13.85mH, RG = 25ý, Peak IL = 19A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

5 IS - -ID [Cont.], di/dt = 100A/µs, VDD - VDSS, Tj - 150°C, RG = 2.0ý,

VR = 200V

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL / PACKAGE CHARACTERISTICS

Symbol

RθJC

RθJA

VIsolation

Torque

MIN

TYP

MAX

0.28

40

2500

13

UNIT

°C/W

Volts

lb•in

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

IS

ISM

VSD

dv/

dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 0.6ý

MIN

TYP

MAX

6600

7900

595

830

290

430

335

500

29

45

165

250

16

32

13

26

59

90

816

UNIT

pF

nC

ns

MIN

TYP

MAX

19

76

1.3

18

Tj = 25°C

300

Tj = 125°C

600

Tj = 25°C

1.7

Tj = 125°C

4.8

Tj = 25°C

12

Tj = 125°C

19

Symbol

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

t r

td(off)

t f

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