Static Characteristics

Source-Drain Diode Characteristics

Dynamic Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

5 C

V

6 R

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

µA

nA

Unit

A

V

ns

µC

V/ns

Unit

S

pF

nC

ns

Min

Typ

Max

600

0.57

0.17

0.21

3

4

5

-10

100

500

±100

Min

Typ

Max

100

124

1

570

11.8

8

Min

Typ

Max

32

6640

70

610

325

170

165

36

70

37

43

115

34

Test Conditions

V

Reference to 25°C, I

V

V

V

T

V

T

V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

I

3

di

I

T

Test Conditions

V

V

f = 1MHz

V

V

V

Resistive Switching

V

R

6

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

∆V

R

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

APT34M60B_S