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APT34M60B Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT34M60B Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 6.44mH, RG = 4.7Ω, IAS = 17A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS^2 + 2.80E-8/VDS + 9.89E-11. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit A V ns µC V/ns Unit S pF nC ns Min Typ Max 600 0.57 0.17 0.21 3 4 5 -10 100 500 ±100 Min Typ Max 100 124 1 570 11.8 8 Min Typ Max 32 6640 70 610 325 170 165 36 70 37 43 115 34 Test Conditions V GS = 0V, ID = 250µA Reference to 25°C, I D = 250µA V GS = 10V, ID = 17A V GS = VDS, ID = 1mA V DS = 600V T J = 25°C V GS = 0V T J = 125°C V GS = ±30V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 17A, TJ = 25°C, VGS = 0V I SD = 17A 3 di SD/dt = 100A/µs, TJ = 25°C I SD ≤ 17A, di/dt ≤1000A/µs, VDD = 400V, T J = 125°C Test Conditions V DS = 50V, ID = 17A V GS = 0V, VDS = 25V f = 1MHz V GS = 0V, VDS = 0V to 400V V GS = 0 to 10V, ID = 17A, V DS = 300V Resistive Switching V DD = 400V, ID = 17A R G = 4.7Ω 6 , V GG = 15V Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Symbol V BR(DSS) ∆V BR(DSS)/∆TJ R DS(on) V GS(th) ∆V GS(th)/∆TJ I DSS I GSS Symbol I S I SM V SD t rr Q rr dv/dt Symbol g fs C iss C rss C oss C o(cr) 4 C o(er) 5 Q g Q gs Q gd t d(on) t r t d(off) t f APT34M60B_S |
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