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APT34M120J Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT34M120J Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page SO T-2 27 ISOTOP® file # E145592 "UL Recognized" G S S D N-Channel MOSFET Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Single die MOSFET Unit A V mJ A Unit W °C/W °C V oz g in·lbf N·m Ratings 34 22 195 ±30 2700 25 Min Typ Max 960 0.13 0.11 -55 150 2500 1.03 29.2 10 1.1 Parameter Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ T C = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Terminals and Mounting Screws. Symbol I D I DM V GS E AS I AR Symbol P D RθJC RθCS T J,TSTG V Isolation W T Torque TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant APT34M120J 1200V, 34A, 0.30Ω Max APT34M120J Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. Microsemi Website - http://www.microsemi.com |
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