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APT56M60B2 Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT56M60B2 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page T-MaxTM TO-264 N-Channel MOSFET Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Single die MOSFET Unit A V mJ A Unit W °C/W °C oz g in·lbf N·m Ratings 56 35 210 ±30 1580 28 Min Typ Max 1040 0.12 0.11 -55 150 300 0.22 6.2 10 1.1 Parameter Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ T C = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque ( TO-264 Package), 4-40 or M3 screw Symbol I D I DM V GS E AS I AR Symbol P D RθJC RθCS T J,TSTG T L W T Torque TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant APT56M60B2 APT56M60L 600V, 56A, 0.13Ω Max APT56M60B2 APT56M60L Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. Microsemi Website - http://www.microsemi.com |
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