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APT5024BVR Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT5024BVR Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 4 page Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA) On State Drain Current 2 (V DS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (V DS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) Gate Threshold Voltage (V DS = VGS, ID = 1.0mA) MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol V DSS I D I DM V GS V GSM P D T J,TSTG T L I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS I D(on) R DS(on) I DSS I GSS V GS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 500 22 0.24 25 250 ±100 24 APT5024BVR_SVR 500 22 88 ±30 ±40 280 2.24 -55 to 150 300 22 30 1210 G D S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalanche Energy Rated • Lower Leakage • TO-247 or Surface Mount D3PAK Package POWER MOS V® CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com APT5024BVR APT5024SVR 500V 22A 0.240Ω Ω Ω Ω Ω TO-247 D3PAK BVR SVR |
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