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AMIS-30600 Datasheet(PDF) 5 Page - AMI SEMICONDUCTOR |
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AMIS-30600 Datasheet(HTML) 5 Page - AMI SEMICONDUCTOR |
5 / 11 page AMIS-30600 LIN Transceiver Data Sheet 6.2 Operating Range Table 5: Operating Range Symbol Parameter Min. Typ. Max. Unit VCC Supply voltage 4.75 +5.25 V VBB Battery supply voltage 7.3 +18 V Tjunc Maximum junction temperature -40 +150 °C Tjsd Thermal shutdown temperature +150 +170 +190 °C Rthj-a Thermal resistance junction to ambient 185 °C/W 6.3 DC Electrical Characteristics VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. All voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Table 6: DC Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit Supply (pin VCC and pin VBB) ICC 5V supply current Dominant; VTxD =0V Recessive; VTxD =VCC 400 250 700 500 µA µA IBB Battery supply current Dominant; VTxD =0V Recessive; VTxD =VCC 1 100 1.5 200 mA µA IBB Battery supply current Sleep mode; VINH = 0V 35 55 µA ICC 5V supply current Sleep mode; VINH = 0V 0.25 1 µA Transmitter Data Input (pin TxD) VIH High-level input voltage Output recessive 0.7 x VCC - VCC V VIL Low-level input voltage Output dominant 0 - 0.3 x VCC V RTxD,pu Pull-up resistor to Vcc 24 60 k Ω Receiver Data Output (pin RxD) VOH High-level output voltage IRXD = -10mA 0.8 x VCC VCC V VOL Low-level output voltage IRXD = 5mA 0 0.2 x VCC V Enable Input (pin EN) VEN,on High-level input voltage Normal mode 0.7 x VCC - VCC V VEN,off Low-level input voltage Low power mode 0 - 0.3 x VCC V REN,pd Pull-down resistor to GND 6 10 15 k Ω Inhibit Output (pin INH) VINH,d High-level voltage drop: VINH,d = VBB - VINH IINH = - 0.15mA 0.5 1.0 V IINH,lk Leakage current Sleep mode; VINH = 0V -5.0 - 5.0 µA Bus Line (pin LIN) Vbus,rec Recessive bus voltage at pin LIN VTxD =VCC 0.9 x VBB - VBB V Vbus,dom Dominant output voltage at pin LIN VTxD = 0V VTxD = 0V; Ibus = 40mA 0 - 0.15 x VBB 1.4 V V Ibus,sc Bus short circuit current Vbus,short = 18V 40 85 130 mA Ibus,lk Bus leakage current VCC=VBB=0V; Vbus=8V VCC=VBB=0V; Vbus=20V -400 -200 5 20 µA Rbus Bus pull-up resistance VTxD = 0V 20 30 47 k Ω Vbus,rd Receiver threshold: recessive to dominant 0.4 x VBB 0.48 x VBB 0.6 x VBB V Vbus,dr Receiver threshold: dominant to recessive 0.4 x VBB 0.52 x VBB 0.6 x VBB V Vq Receiver hysteresis Vbus,hys=Vbus,rec-Vbus,dom 0.05 x VBB 0.04 x VBB 0.175 x VBB V VWAKE Wake-up threshold voltage 0.4 x VBB 0.6 x VBB V AMI Semiconductor – Rev. 2.0, Apr. 2005 5 www.amis.com |
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