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APT10090SFLL Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT10090SFLL Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 5 page Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, I D = 250µA) On State Drain Current 2 (V DS > I D(on) x R DS(on) Max, V GS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 6A) Zero Gate Voltage Drain Current (V DS = 1000V, V GS = 0V) Zero Gate Voltage Drain Current (V DS = 800V, V GS = 0V, T C = 125°C) Gate-Source Leakage Current (V GS = ±30V, V DS = 0V) Gate Threshold Voltage (V DS = V GS , I D = 1mA) MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol V DSS I D I DM V GS V GSM P D T J ,T STG T L I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS I D(on) R DS(on) I DSS I GSS V GS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 1000 12 0.90 250 1000 ±100 35 APT10090 1000 12 48 ±30 ±40 298 2.4 -55 to 150 300 12 30 1210 G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com TO-247 D3PAK BFLL SFLL APT10090BFLL APT10090SFLL 1000V 12A 0.900 Ω Ω Ω Ω Ω • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE Power MOS 7 ® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® by significantly lowering R DS(ON) and Q g. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R FREDFET |
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