APTC60AM35SCTG

www.microsemi.com

1 – 8

NT C2

OUT

VBUS

NT C1

0/VBUS

Q1

G1

Q2

S1

S2

G2

NTC2

S1

OUT

OUT

NTC1

VBUS

0/VBUS

G2

S2

G1

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

600

V

72

Continuous Drain Current

54

Pulsed Drain current

288

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

35

m

Ω

Maximum Power Dissipation

416

W

Avalanche current (repetitive and non repetitive)

20

A

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

1800

mJ

Application

•

Motor control

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

Features

•

-

-

Low Miller capacitance

-

Ultra low gate charge

-

Avalanche energy rated

•

Parallel SiC Schottky Diode

-

Zero reverse recovery

-

Zero forward recovery

-

Temperature Independent switching behavior

-

Positive temperature coefficient on VF

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

Lead frames for power connections

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS Compliant

Phase leg

Series & SiC parallel diodes

Super Junction

MOSFET Power Module