APTC60HM70SCTG datasheet(6/8 Pages) MICROSEMI | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

Part Name

Description

APTC60HM70SCTG

Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module ( 8 Page)

MICROSEMI

6 page

APTC60HM70SCTG

www.microsemi.com

6 – 8

0.7

0.8

0.9

1.0

1.1

1.2

-50 -25

25 50 75 100 125 150

TJ, Junction Temperature (°C)

Breakdown Voltage vs Temperature

ON resistance vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50 -25 0

25 50 75 100 125 150

J, Junction Temperature (°C)

VGS=10V

ID= 39A

Threshold Voltage vs Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-50 -25

25 50 75 100 125 150

TC, Case Temperature (°C)

Maximum Safe Operating Area

10 ms

1 ms

100µs

100

1000

100

1000

VDS, Drain to Source Voltage (V)

limited by RDSon

Single pulse

TJ=150°C

TC=25°C

Ciss

Crss

Coss

100

1000

10000

100000

102030

4050

VDS, Drain to Source Voltage (V)

Capacitance vs Drain to Source Voltage

VDS=120V

VDS=300V

VDS=480V

100

150

200

250

300

Gate Charge (nC)

Gate Charge vs Gate to Source Voltage

ID=39A

TJ=25°C

1 2 3 4 5 6 7 8

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