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APTC80H29SCTG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTC80H29SCTG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 7 page  APTC80H29SCTG www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 800V Tj = 25°C 25 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 250 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 7.5A 290 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 2254 Coss Output Capacitance 1046 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 54 pF Qg Total gate Charge 91 Qgs Gate – Source Charge 12 Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 15A 46 nC Td(on) Turn-on Delay Time 10 Tr Rise Time 13 Td(off) Turn-off Delay Time 83 Tf Fall Time Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A RG = 5Ω 35 ns Eon Turn-on Switching Energy 146 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 139 µJ Eon Turn-on Switching Energy 255 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 171 µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 500 µA IF DC Forward Current Tc = 85°C 30 A IF = 30A 1.1 1.15 IF = 60A 1.4 VF Diode Forward Voltage IF = 30A Tj = 125°C 0.9 V Tj = 25°C 24 trr Reverse Recovery Time Tj = 125°C 48 ns Tj = 25°C 33 Qrr Reverse Recovery Charge IF = 30A VR = 133V di/dt = 200A/µs Tj = 125°C 150 nC |
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