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APTGF10X60BTP2 Datasheet(PDF) 3 Page - Advanced Power Technology |
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APTGF10X60BTP2 Datasheet(HTML) 3 Page - Advanced Power Technology |
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3 / 4 page  APTGF10X60RTP2 APTGF10X60BTP2 APT website – http://www.advancedpower.com 3 - 4 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 600 V Tj = 25°C 0.5 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 0.8 mA Tj = 25°C 1.95 2.35 VCE(on) Collector Emitter on Voltage VGE =15V IC = 10A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 0.6 mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz 600 pF Td(on) Turn-on Delay Time 35 Tr Rise Time 30 Td(off) Turn-off Delay Time 220 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 10A RG = 82Ω 18 ns Td(on) Turn-on Delay Time 35 Tr Rise Time 35 Td(off) Turn-off Delay Time 230 Tf Fall Time 30 ns Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 10A RG = 82Ω 0.3 mJ Tj = 25°C 1.25 1.7 VF Forward Voltage VGE = 0V IF = 10A Tj = 125°C 1.2 V Tj = 25°C 0.85 Qrr Reverse Recovery Charge IF = 10A VR = 300V di/dt=400A/µs Tj = 125°C 1.35 µC IGBT 1.5 RthJC Junction to Case Diode 2.3 °C/W Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 k Ω B 25/50 T25 = 298.16 K 3375 K − = T T B R R T 1 1 exp 25 50 / 25 25 3. Thermal and package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 °C Torque Mounting torque To Heatsink M5 3.3 N.m Wt Package Weight 185 g T: Thermistor temperature RT: Thermistor value at T |
Similar Part No. - APTGF10X60BTP2 |
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Similar Description - APTGF10X60BTP2 |
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