APTGF50DH60TG

www.microsemi.com

1 - 6

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

Collector - Emitter Breakdown Voltage

600

V

65

Continuous Collector Current

50

Pulsed Collector Current

230

A

Gate – Emitter Voltage

±20

V

Maximum Power Dissipation

250

W

RBSOA

Reverse Bias Safe Operating Area

100A@500V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

VBUS

Q4

OUT2

OUT1

VBUS SENSE

CR3

0/VBUS

G4

E4

NTC2

Q1

CR2

0/VBUS SENSE

NTC1

G1

E1

NTC2

OUT1

OUT2

VBUS

VBUS

SENSE

E1

NTC1

E4

G4

0/VBUS

0/VBUS

SENSE

G1

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

-

Low voltage drop

-

Low tail current

-

Switching frequency up to 100 kHz

-

Soft recovery parallel diodes

-

Low diode VF

-

Low leakage current

-

Avalanche energy rated

-

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

•

Very low stray inductance

-

Symmetrical design

-

Lead frames for power connections

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency

operation

•

Stable temperature behavior

•

Very rugged

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal

for easy PCB mounting

•

Easy paralleling due to positive TC of VCEsat

•

Low profile

•

RoHS compliant

Asymmetrical - Bridge

NPT IGBT Power Module