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APTGF50DH120TG Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APTGF50DH120TG
Description  Asymmetrical - Bridge NPT IGBT Power Module
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF50DH120TG Datasheet(HTML) 4 Page - Microsemi Corporation

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APTGF50DH120TG
www.microsemi.com
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Typical Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
40
80
120
160
200
0
246
8
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
10
20
30
40
50
0
123
4
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
04
8
12
16
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Gate Charge
VCE=240V
VCE=600V
VCE=960V
0
2
4
6
8
10
12
14
16
18
0
50
100
150
200
250
300
350
Gate Charge (nC)
IC = 50A
TJ = 25°C
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
7
8
9
9
10111213141516
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
80
90
-50 -25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature


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